radiation hardened power mosfet thru-hole (mo-036) www.irf.com 1 mo-036ab IRHG57110 100v, quad n-channel technology features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight product summary part number radiation level r ds(on) i d IRHG57110 100k rads (si) 0.29 ? 1.6a irhg53110 300k rads (si) 0.29 ? 1.6a irhg54110 500k rads (si) 0.29 ? 1.6a irhg58110 1000k rads (si) 0.31 ? 1.6a absolute maximum ratings (per die) parameter units i d @ v gs = 12v, t c = 25c continuous drain current 1.6 i d @ v gs = 12v, t c = 100c continuous drain current 1.0 i dm pulsed drain current 6.4 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.011 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 130 mj i ar avalanche current 1.6 a e ar repetitive avalanche energy 0.14 mj dv/dt peak diode recovery dv/dt 6.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (typical) g c a for footnotes refer to the last page pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. esd rating: class 1a per mil-std-750, method 1020 pd-94432c
IRHG57110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? 1.6 i sm pulse source current (body diode) ? ? 6.4 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 1.6a, v gs = 0v t rr reverse recovery time ? ? 110 ns t j = 25c, i f = 1.6a, di/dt 100a/ s q rr reverse recovery charge ? ? 380 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) (per die) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.14 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.29 v gs = 12v, i d = 1.0a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.0 ? ? s v ds = 15v, i ds = 1.0a i dss zero gate voltage drain current ? ? 10 v ds = 80v, v gs = 0v ??25 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 17 v gs =12v, i d = 1.6a, q gs gate-to-source charge ? ? 4.4 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 3.9 t d (on) turn-on delay time ? ? 21 v dd = 50v, i d = 1.6a, t r rise time ? ? 16 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 30 t f fall time ? ? 15 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 370 ? v gs = 0v, v ds = 25v c oss output capacitance ? 110 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 3.4 ? na nh ns a ? ? note: corresponding spice and saber models are available on the international rectifier website. thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient ? ? 90
c/w
www.irf.com 3 pre-irradiation IRHG57110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter up to 500k rads(si) 1 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? 0.226 ? 0.246 ? v gs = 12v, i d = 1.0a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.29 ? 0.31 ? v gs = 12v, i d = 1.0a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. part numbers IRHG57110, irhg53110, irhg54110 2. part number irhg58110 v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 1.6a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. 1000k rads (si) 2 fig a. typical single event effect, safe operating area for footnotes refer to the last page table 2. typical single event effect safe operating area (per die) let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 61 5% 330 7.5% 31 10% 100 100 100 35 25 84 5% 350 10% 28 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5%
IRHG57110 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 5.0 5.5 6.0 6.5 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 1.6a 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v
www.irf.com 5 pre-irradiation IRHG57110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 200 400 600 800 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.6a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on)
IRHG57110 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 0.0 0.3 0.6 1.0 1.3 1.6 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHG57110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.7a 1.0a 1.6a
IRHG57110 pre-irradiation 8 www.irf.com repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 100mh, peak i l = 1.6a, v gs =12v i sd 1.6a, di/dt 340a/ s, v dd 100v, t j 150c pulse width 300 s; duty cycle 2% case outline and dimensions ? mo-036ab footnotes: ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2015 total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a
|
